gan on sic hemt power transistor 10w cw, 30 mhz - 3.5 ghz rev. v3 MAGX-000035-010000 magx-000035-01000s 1 1 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 1 ordering information 1,2 part number package MAGX-000035-010000 10 w gan power transistor (flanged) magx-000035-01000s 10 w gan power transistor (flangeless) magx-000035-sb2ppr 1.2-1.4 ghz evaluation board (flanged) magx-000035-sb3ppr 1.2-1.4 ghz evaluation board (flangeless) features ?? gan depletion-mode hemt microwave transistor ?? common-source configuration ?? no internal matching ?? broadband class ab operation ?? rohs* compliant ?? +50 v typical operation ?? mttf = 600 years description the magx-000035-01000x is a gold-metalized unmatched gallium nitride (gan) on silicon carbide rf power transistor suitable for a variety of rf power amplifier applications. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today?s demanding application needs. the magx-000035-01000x is constructed with either a flanged or flangeless ceramic package which provides excellent t hermal performance. high breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions compared with older semiconductor technologies. applications general purpose for pulsed or cw applications: ?? commercial wireless in frastructure (wcdma, lte, wimax) ?? civilian and military radar ?? military and commercial communications ?? public radio ?? industrial, scientific and medical ?? satcom ?? instrumentation ?? avionics ordering information magx-000035-01000s (flangeless) MAGX-000035-010000 (flanged) * restrictions on hazardous substanc es, european union directive 2002/95/ec.
gan on sic hemt power transistor 10w cw, 30 mhz - 3.5 ghz rev. v3 MAGX-000035-010000 magx-000035-01000s 2 2 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 2 parameter limit supply voltage (v dd ) +65 v supply voltage (v gg ) -8 to 0 v supply current (i dd ) 800 ma input power (p in ) 25 dbm junction/channel temp 200oc continuous power dissipation (p diss ) at 85 oc 18 w pulsed power dissipation (p avg ) at 85 oc 43 w thermal resistance, (t j = 200 oc), cw 9.2 oc/w thermal resistance, (t j = 200 oc), pulsed 500 s, 10% duty cycle 3.4 oc/w operating temp -40 to +95oc storage temp -65 to +150oc esd min. - charged device model (cdm) 250 v esd min. - human body model (hbm) 250 v mttf (t j < 200 c) 600 years parameter test conditions symbol min. typ. max. units input capacitance v ds = 0 v, v gs = -8 v, f = 1 mhz c iss - 4.4 - pf output capacitance v ds = 50 v, v gs = -8 v, f = 1 mhz c oss - 1.9 - pf reverse transfer capacitance v ds = 50 v, v gs = -8 v, f = 1 mhz c rss - 0.2 - pf 1. exceeding any one or combination of these limits may cause permanent damage to this device 2. junction temperature directly affects device mttf. junction temperature should be kept as low as possible to maximize lifeti me. 3. for saturated performance it is recommended that the sum of (3*vdd + abs(vgg)) <175 v. absolute maximum ratings 1, 2, 3 dc characteristics parameter test conditions symbol min. typ. max. units drain-source leakage current v gs = -8 v, v ds = 175 v i ds - - 10.8 ma gate threshold voltage v ds = 5 v, i d = 2 ma v gs (th) -5 -3 -2 v forward transconductance v ds = 5 v, i d = 500 ma g m 5.5 - - s dc characteristics
gan on sic hemt power transistor 10w cw, 30 mhz - 3.5 ghz rev. v3 MAGX-000035-010000 magx-000035-01000s 3 3 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 3 electrical specifications: t a = 25 oc test fixture impedance freq. (mhz) z in-opt ( ? ) z out-opt ( ? ) 1300 3.6 + j6.9 38.3 + j20.5 parameter test conditions symbol min. typ. max. units rf functional tests cw output power (p2db) 1.3 ghz v dd = 50 v, i dq = 25 ma, p in = 0.3 w p out 10 11 - w power gain (p2db) 1.3 ghz v dd = 50 v, i dq = 25 ma g p 18 19 db drain efficiency @ 1.3 ghz v dd = 50 v, i dq = 25 ma, p out = 10 w d 45 % load mismatch stability v dd = 50 v, i dq = 25 ma, p in = 0.3 w vswr-s 5:1 - - - load mismatch tolerance v dd = 50 v, i dq = 25 ma, p in = 0.3 w vswr-t 10:1 - - -
gan on sic hemt power transistor 10w cw, 30 mhz - 3.5 ghz rev. v3 MAGX-000035-010000 magx-000035-01000s 4 4 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 4 freq. (ghz) p out (dbm) p out (w) gain (db) i d (a) eff. (%) v d (v) i dq (ma) 1.20 40.0 10.0 17.5 0.49 41 50 25 1.30 40.0 10.0 18.4 0.40 44 - - 1.40 40.0 10.0 17.8 0.50 40 - - 1.2?1.4 ghz typical cw performance 1.2?1.4 ghz test fixture freq. (ghz) p2db (dbm) p out (w) gain (db) i d (a) eff. (%) v d (v) i dq (ma) 3.30 40.3 10.7 16.2 0.38 57 50 25 3.3 ghz typical cw performance
gan on sic hemt power transistor 10w cw, 30 mhz - 3.5 ghz rev. v3 MAGX-000035-010000 magx-000035-01000s 5 5 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 5 v d = 50 v i dq = 25 ma pulse = 100 s duty = 15% 1.2?1.4 ghz performance with pulsed signal
gan on sic hemt power transistor 10w cw, 30 mhz - 3.5 ghz rev. v3 MAGX-000035-010000 magx-000035-01000s 6 6 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 6 1.2?1.4 ghz matching circuit for rogers rt6010.2lm
gan on sic hemt power transistor 10w cw, 30 mhz - 3.5 ghz rev. v3 MAGX-000035-010000 magx-000035-01000s 7 7 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 7 outline drawings MAGX-000035-010000 magx-000035-01000s
gan on sic hemt power transistor 10w cw, 30 mhz - 3.5 ghz rev. v3 MAGX-000035-010000 magx-000035-01000s 8 8 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 8 turning the device on 1. set v gs to the pinch-off (v p ), typically -5 v. 2. turn on v ds to nominal voltage (50 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v gs down to v p . 3. decrease v ds down to 0 v. 4. turn off v gs . correct device sequencing
|
